2SB503 datasheet(2/2 Pages) ISC

部件名	2SB503

功能描述	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Power Transistors

2SB503

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA; IB= 0

-50

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -0.1mA; IE= 0

-70

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-8

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

-1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

-1.8

ICBO

Collector Cutoff Current

VCB= -50V; IE= 0

-10

μ A

IEBO

Emitter Cutoff Current

VEB= -8V; IC= 0

-100

μ A

hFE-1

DC Current Gain

IC= -0.5A; VCE= -5V

280

hFE-2

DC Current Gain

IC= -2.5A; VCE= -5V

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

200

 h

FE Classifications

30-70

50-140

100-280

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