2SB503 datasheet(1/2 Pages) ISC

部件名	2SB503

功能描述	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistors

2SB503

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -50V(Min)

·High Power Dissipation-

: PC= 25W(Max)@TC=25℃

APPLICATIONS

·Designed for audio power amplifier and regulator

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-8

V

IC

Collector Current-Continuous

-3

A

PC

Collector Power Dissipation

@Ta=25℃

1.5

W

Collector Power Dissipation

@TC=25℃

25

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

类似零件编号 - 2SB503

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SB503A	56Kb / 1P	SILICON PNP TRANSISTOR

More results

类似说明 - 2SB503

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	2SA1080	98Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
	2SA505	108Kb / 2P	Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.)
	2SA652	82Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)
	3DD101A	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
	3DD325	195Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	2SB565	113Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)
	3DD7A	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	3DD8B	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	BUY55	192Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 125V(Min.)
	BUY77	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO = 250V(Min.)