BDT60 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon PNP Darlington Power Transistors

BDT60/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BDT60

IC= -30mA; IB= 0

-60

BDT60A

-80

BDT60B

-100

BDT60C

-120

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1.5A; IB= -6mA

-2.5

VBE(on)

Base-Emitter On Voltage

IC= -1.5A ; VCE= -3V

-2.5

ICBO

Collector

Cutoff Current

BDT60

VCB= -60V; IE= 0

VCB= -30V; IE= 0; TJ=150℃

-0.2

-2.0

BDT60A

VCB= -80V; IE= 0

VCB= -40V; IE= 0; TJ=150℃

-0.2

-2.0

BDT60B

VCB= -100V; IE= 0

VCB= -50V; IE= 0; TJ=150℃

-0.2

-2.0

BDT60C

VCB= -120V; IE= 0

VCB= -60V; IE= 0; TJ=150℃

-0.2

-2.0

ICEO

Collector

Cutoff Current

BDT60

VCE= -30V; IB= 0

-0.5

BDT60A

VCE= -40V; IB= 0

-0.5

BDT60B

VCE= -50V; IB= 0

-0.5

BDT60C

VCE= -60V; IB= 0

-0.5

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5

hFE

DC Current Gain

IC= -1.5A; VCE= -3V

750

VECF

C-E Diode Forward Voltage

IE= -1.5A

-2.0

Switching Times

ton

Turn-On Time

IC= -2A; IB1= -IB2= -8mA;

VBE(off)= 5V; RL= 20Ω

1.0

μs

toff

Turn-Off Time

4.5

μs

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