BDT60 datasheet(1/2 Pages) ISC

部件名	BDT60

功能描述	Complement to Type BDT61/A/B/C

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon PNP Darlington Power Transistors

BDT60/A/B/C

DESCRIPTION

·DC Current Gain -hFE = 750(Min)@ IC= -1.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A;

-100V(Min)- BDT60B; -120V(Min)- BDT60C

·Complement to Type BDT61/A/B/C

APPLICATIONS

·Designed for use in audio amplifier output stages , general

purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base

Voltage

BDT60

-60

V

BDT60A

-80

BDT60B

-100

BDT60C

-120

VCEO

Collector-Emitter

Voltage

BDT60

-60

V

BDT60A

-80

BDT60B

-100

BDT60C

-120

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

IB

Base Current

-0.1

A

PC

Collector Power Dissipation

Ta=25℃

2

W

Collector Power Dissipation

TC=25℃

50

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.5

℃/W

Rth j-c

Thermal Resistance,Junction to Ambient

62.5

℃/W

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New Jersey Semi-Conduct...	BDT60	212Kb / 2P	PNP SILICON POWER DARLINGTONS
Power Innovations Ltd	BDT60A	168Kb / 6P	PNP SILICON POWER DARLINGTONS

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