CT2312-R3 datasheet(1/11 Pages) CTMICRO

部件名	CT2312-R3

功能描述	N-Channel Enhancement MOSFET

PDF	11 Pages

Scroll/Zoom	100%

制造商	CTMICRO [CT Micro International Corporation]

网页	http://www.ct-micro.com/

标志

1 / 11 page

CT Micro

Rev 4

Proprietary & Confidential

Page 1

Jun, 2015

CT2312-R3

N-Channel Enhancement MOSFET

Package Outline

Schematic

Features

• Drain-Source Breakdown Voltage VDSS 20 V

• Drain-Source On-Resistance

RDS(ON) 22m

Ω, at VGS= 4.5V, IDS= 4.5A

RDS(ON) 27m

Ω, at VGS= 2.5V, IDS= 4.0A

• Continuous Drain Current at TA=25℃ ID = 4.5A

• Advanced high cell density Trench Technology

• RoHS Compliance & Halogen Free

Applications

• Power Management

• Portable Equipment

• Load Switch

• DSC

Description

The CT2312-R3 uses high performance Trench

Technology to provide excellent RDS(ON) and low gate

charge which is suitable for most of the synchronous

buck converter applications .

Gate

Source

Drain

Gate

Drain

Source

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