CT2312-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 4

Proprietary & Confidential

Page 3

Jun, 2015

CT2312-R3

N-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= 250µA

IDSS

Drain-Source Leakage Current

VDS = 20V, VGS = 0V

µ A

IGSS

Gate-Source Leakage Current

VGS = ±8V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = 4.5V, ID = 4.5A

Fig 4

VGS = 2.5V, ID = 4.0A

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID =250µA

0.4

1.0

Fig 5

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = 8V ,

VGS = 0V,

f=1MHz

599

Fig 3

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = 10V , VGS = 4.5V,

RG = 6 ,

ID =1A

3.5

Fig

11 & 12

Rise Time

TD(OFF)

Turn-Off Delay Time

Fall Time

Total Gate Charge

VDS = 10V , VGS = 4.5V,

ID = 4.5A

7.5

Fig

9 & 10

QGS

Gate-Source Charge

QGD

Gate-Drain (Miller) Charge

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