CT3331-R3 datasheet(1/11 Pages) CTMICRO

部件名	CT3331-R3

功能描述	P-Channel Enhancement MOSFET

PDF	11 Pages

Scroll/Zoom	100%

制造商	CTMICRO [CT Micro International Corporation]

网页	http://www.ct-micro.com/

标志

1 / 11 page

CT Micro

Rev 3

Proprietary & Confidential

Page 1

Oct, 2014

CT3331-R3

P-Channel Enhancement MOSFET

Package Outline

Schematic

Features

• Drain-Source Breakdown Voltage VDSS - 200 V

• Drain-Source On-Resistance

RDS(ON) 2.3

Ω, at VGS= - 10V, IDS= - 0.2A

RDS(ON) 2.4

Ω, at VGS= - 4.5V, IDS= - 0.2A

• Continuous Drain Current at TA=25℃, ID = - 0.4A

• Advanced high cell density Trench Technology

• RoHS Compliance & Halogen Free

• ESD Protection

Applications

• Switches

• Power supply circuits

• Motor controls

• Drivers

Description

The CT3331-R3 uses high performance Trench

Technology to provide excellent RDS(ON) and low gate

charge which is suitable for most of the synchronous

buck converter applications .

Gate

Source

Drain

Gate

Drain

Source

类似零件编号 - CT3331-R3

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	CT331	624Kb / 2P	MAXIMUM RATINGS, ELECTRICAL SPECIFICATIONS
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