CT3331-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 3

Proprietary & Confidential

Page 3

Oct, 2014

CT3331-R3

P-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= - 250µA

-200

IDSS

Drain-Source Leakage Current

VDS = -200V, VGS = 0V

-1

µ A

IGSS

Gate-Source Leakage Current

VGS = ±16V, VDS = 0V

±10

µ A

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = -10V, ID = -200mA

2.3

Ω

VGS = -4.5V, ID = -200mA

2.4

4.5

Ω

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID = -250µA

-1.2

-2.6

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = - 20V ,

VGS = 0V,

f=1MHz

350

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = -100V , VGS = - 4.5V,

RG = 4.7 ,

ID = -2.8A

Rise Time

TD(OFF)

Turn-Off Delay Time

Fall Time

Total Gate Charge

VDS = -100V , VGS = -10V,

ID = -400mA

7.0

QGS

Gate-Source Charge

1.0

QGD

Gate-Drain (Miller) Charge

0.8

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