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2N80 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N80 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 2N80 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 800 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 2.4A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1A 7.0 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 10 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 425 550 pF Crss Reverse Transfer capacitance 5.5 7 Coss Output Capacitance 45 60 tr Rise Time VGS=10V; ID=2.4A; VDD=400V; RL=25Ω 30 70 ns td(on) Turn-on Delay Time 12 35 tf Fall Time 28 65 td(off) Turn-off Delay Time 25 60 · PDF pdfFactory Pro www.fineprint.cn |
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