2N80 datasheet(1/2 Pages) ISC

部件名	2N80

功能描述	Drain Current ID= 2.4A@ TC=25C

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

2N80

·FEATURES

·Drain Current ID= 2.4A@ TC=25℃

·Drain Source Voltage-

: VDSS= 800V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 7.0Ω(Max)

·Fast Switching

·APPLICATIONS

·Switching power supplies,converters,AC and DC motor controls

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

800

V

VGS

Gate-Source Voltage-Continuous

±30

V

ID

Drain Current-Continuous

2.4

A

IDM

Drain Current-Single Plused

9.6

A

PD

Total Dissipation @TC=25℃

90

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

5.2

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62.5

℃/W

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类似零件编号 - 2N80

制造商	部件名	数据表	功能描述
Unisonic Technologies	2N80	170Kb / 6P	2 Amps, 800 Volts N-CHANNEL POWER MOSFET
	2N80	235Kb / 6P	2A, 800V N-CHANNEL POWER MOSFET
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American Microsemicondu...	2N808	1Mb / 2P	GERMABIUM PNP MESA TRANSISTORS
Unisonic Technologies	2N80G-TF3-T	170Kb / 6P	2 Amps, 800 Volts N-CHANNEL POWER MOSFET

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