CTL0642NS-R3 datasheet(1/11 Pages) CTMICRO

部件名	CTL0642NS-R3

功能描述	N-Channel Enhancement MOSFET

PDF	11 Pages

Scroll/Zoom	100%

制造商	CTMICRO [CT Micro International Corporation]

网页	http://www.ct-micro.com/

标志

1 / 11 page

CT Micro

Rev 2

Proprietary & Confidential

Page 1

Jun, 2015

CTL0642NS-R3

N-Channel Enhancement MOSFET

Package Outline

Schematic

Features

• Drain-Source Breakdown Voltage VDSS 20 V

• Drain-Source On-Resistance

RDS(ON) 17m

Ω, at VGS= 4.5V, IDS= 6.4A

RDS(ON) 20m

Ω, at VGS= 2.5V, IDS= 5.5A

RDS(ON) 25m

Ω, at VGS= 1.8V, IDS= 5.0A

• Continuous Drain Current at TA=25℃ ID = 6.4A

• Advanced high cell density Trench Technology

• RoHS Compliance & Halogen Free

• ESD protection

Applications

• Power Management

• Battery Powered System

• Portable Equipment

• DC/DC Converter

Description

The CTL0642NS-R3 is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high

density process is especially tailored to minimize on-state

resistance.

Gate

Source

Drain

Gate

Drain

Source

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