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CTL0642NS-R3 数据表(PDF) 3 Page - CT Micro International Corporation

部件名 CTL0642NS-R3
功能描述  N-Channel Enhancement MOSFET
PDF  11 Pages
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制造商  CTMICRO [CT Micro International Corporation]
网页  http://www.ct-micro.com/
标志 CTMICRO - CT Micro International Corporation

CTL0642NS-R3 数据表(HTML) 3 Page - CT Micro International Corporation

  CTL0642NS-R3 Datasheet HTML 1Page - CT Micro International Corporation CTL0642NS-R3 Datasheet HTML 2Page - CT Micro International Corporation CTL0642NS-R3 Datasheet HTML 3Page - CT Micro International Corporation CTL0642NS-R3 Datasheet HTML 4Page - CT Micro International Corporation CTL0642NS-R3 Datasheet HTML 5Page - CT Micro International Corporation CTL0642NS-R3 Datasheet HTML 6Page - CT Micro International Corporation CTL0642NS-R3 Datasheet HTML 7Page - CT Micro International Corporation CTL0642NS-R3 Datasheet HTML 8Page - CT Micro International Corporation CTL0642NS-R3 Datasheet HTML 9Page - CT Micro International Corporation Next Button
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CT Micro
Rev 2
Proprietary & Confidential
Page 3
Jun, 2015
CTL0642NS-R3
N-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID= 250µA
20
-
-
V
IDSS
Drain-Source Leakage Current
VDS = 20V, VGS = 0V
-
-
1
µ A
IGSS
Gate-Source Leakage Current
VGS = ±8V, VDS = 0V
-
-
±10
µ A
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = 10V, ID = 6.4A
-
17
21
m
3
VGS = 10V, ID = 5.5A
20
25
m
VGS = 4.5V, ID = 5.0A
-
25
33
m
VGS(TH)
Gate-Source Threshold Voltage
VGS = VDS, ID =250µA
0.4
0.6
1.0
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VDS = 10V ,
VGS = 0V,
f=1MHz
-
150
-
pF
COSS
Output Capacitance
-
95
-
CRSS
Reverse Transfer Capacitance
-
25
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = 10V , VGS = 5V,
RG = 3 ,
RL = 1.5
-
250
300
ns
TR
Rise Time
-
420
500
TD(OFF)
Turn-Off Delay Time
-
3950
4200
TF
Fall Time
-
3700
3900
QG
Total Gate Charge
VDS = 10V , VGS = 4.5V,
ID = 6.5A
-
10
12
nC
QGS
Gate-Source Charge
-
0.9
-
QGD
Gate-Drain (Miller) Charge
-
3
-



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