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CLC451 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 CLC451
功能描述  Single Supply, Low-Power, High Output, Programmable Buffer
PDF  12 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

CLC451 数据表(HTML) 2 Page - National Semiconductor (TI)

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PARAMETERS
CONDITIONS
TYP
MIN/MAX RATINGS
UNITS
NOTES
Ambient Temperature
CLC451AJ
+25°C
+25°C
0 to 70°C
-40 to 85°C
FREQUENCY DOMAIN RESPONSE
-3dB bandwidth
Vo = 0.5Vpp
85
60
55
55
MHz
Vo = 2.0Vpp
70
55
50
45
MHz
-0.1dB bandwidth
Vo = 0.5Vpp
20
15
13
13
MHz
gain peaking
<200MHz, Vo = 0.5Vpp
0
0.5
0.9
1.0
dB
gain rolloff
<30MHz, Vo = 0.5Vpp
0.2
0.5
0.7
0.7
dB
linear phase deviation
<30MHz, Vo = 0.5Vpp
0.1
0.4
0.5
0.5
deg
TIME DOMAIN RESPONSE
rise and fall time
2V step
6.5
9.0
9.7
10.5
ns
settling time to 0.05%
1V step
25
ns
overshoot
2V step
13
15
18
18
%
slew rate
2V step
260
180
165
150
V/
µs
DISTORTION AND NOISE RESPONSE
2nd harmonic distortion
2Vpp, 1MHz
-78
-72
-70
-70
dBc
2Vpp, 1MHz; RL = 1kΩ
-66
-60
-58
-58
dBc
2Vpp, 5MHz
-60
-54
-52
-52
dBc
3rd harmonic distortion
2Vpp, 1MHz
-65
-61
-59
-59
dBc
2Vpp, 1MHz; RL = 1kΩ
-75
-69
-67
-67
dBc
2Vpp, 5MHz
-52
-48
-46
-46
dBc
equivalent input noise
voltage (eni)
>1MHz
3.0
3.7
4
4
nV/
√Hz
non-inverting current (ibn)
>1MHz
6.9
9
10
10
pA/
√Hz
inverting current (ibi)
>1MHz
8.5
11
12
12
pA/
√Hz
STATIC DC PERFORMANCE
input offset voltage
8
30
37
37
mV
A
average drift
80
µV/˚C
input bias current (non-inverting)
3
14
17
18
µAA
average drift
25
nA/˚C
gain accuracy
±0.3
±1.5
±2.0
±2.0
%
A
internal resistors (Rf, Rg)
1000
±20%
±26%
±30%
power supply rejection ratio
DC
49
46
44
44
dB
common-mode rejection ratio
DC
51
48
46
46
dB
supply current
RL= ∞
1.5
1.7
1.8
1.8
mA
A
MISCELLANEOUS PERFORMANCE
input resistance (non-inverting)
0.5
0.37
0.33
0.33
M
input capacitance (non-inverting)
1.5
2.3
2.3
2.3
pF
input voltage range, High
4.2
4.1
4.0
4.0
V
input voltage range, Low
0.8
0.9
1.0
1.0
V
output voltage range, High
RL = 100Ω
4.0
3.9
3.8
3.8
V
output voltage range, Low
RL = 100Ω
1.0
1.1
1.2
1.2
V
output voltage range, High
RL = ∞
4.1
4.0
4.0
3.9
V
output voltage range, Low
RL = ∞
0.9
1.0
1.0
1.1
V
output current
100
80
65
40
mA
B
output resistance, closed loop
DC
400
600
600
600
m
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
+5V Electrical Characteristics (A
v = +2, RL = 100Ω,Vs = +5V
1,Vcm = VEE + (Vs/2), RL tied to Vcm, unless specified)
Absolute Maximum Ratings
supply voltage (VCC - VEE)
+14V
output current (see note C)
140mA
common-mode input voltage
VEE to VCC
maximum junction temperature
+150°C
storage temperature range
-65°C to +150°C
lead temperature (soldering 10 sec)
+300°C
ESD rating (human body model)
500V
Notes
A) J-level: spec is 100% tested at +25°C.
B) The short circuit current can exceed the maximum safe
output current.
1) Vs = VCC - VEE
Reliability Information
Transistor Count
49
MTBF (based on limited test data)
31Mhr



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