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CLC449AMC 数据表(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 CLC449AMC
功能描述  1.1GHz Ultra-Wideband Monolithic Op Amp
PDF  12 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

CLC449AMC 数据表(HTML) 7 Page - National Semiconductor (TI)

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A
2-Tone, 3rd Order IMD Intercept plot is found in the
Typical Performance Characteristics section. The
output power level is taken at the load.
Third-order
harmonic distortion is calculated with the formula:
HD3rd = 2 (IP3o – Po)
where:
IP3o = third-order output intercept, dBm at
the load.
Po = output power level, dBm at the load.
HD3rd = third-order distortion from the
fundamental, -dBc.
dBm is the power in mW, at the load,
expressed in dB.
Realized
third-order
output
distortion
is
highly
dependent upon the external circuit.
Some of the
common external circuit choices that improve 3rd order
distortion are:
short and equal return paths from the load
to the supplies.
de-coupling capacitors of the correct value.
higher load resistance.
a lower ratio of the output swing to the power
supply voltage.
Dynamic Range (Noise)
In RF applications, noise is frequently specified as Noise
Figure (NF). Figure 7 plots NF for the CLC449 at a gain
of 10, with a feedback resistor Rf of 100Ω, and with no
input matching resistor.
The minimum Noise Figure
(2.5dB) for these conditions occurs when the source
resistance equals 700
Ω.
Figure 7. Noise Figure Plot
Figure 8: CLC449 Noise Model
The CLC449 noise model in Figure 8 is used to develop
the equation below.
The equation for Noise Figure (NF) is:
where:
Rs is the source resistance at the non-
inverting input.
There is no matching resistor from the input
to ground.
eni, ibn, ibi are the voltage and current noise
density terms (see in the
Distortion and
Noise Response sub-section of the Electrical
Characteristics section).
4kT = 16 x 10-21J, T = 290°K.
Rf is the feedback resistor and Rg is the gain
setting resistor.
Printed Circuit Board Layout and Measurement
High Frequency op amp performance is strongly depen-
dent on proper layout, proper resistive termination and
adequate power supply decoupling. The most important
layout points to follow are:
Use a ground plane.
Bypass power supply pins with monolithic
capacitors of about 0.1
µF value and place
the capacitors less than 0.1” (3mm) from the pin.
Bypass power supply pins with 6.8µF tantalum
capacitors for large signal current swings or
improved power supply noise rejection.
Minimize trace and lead lengths for components
between the inverting and output pins.
Remove
ground
plane
underneath
the
amplifier package and within 0.1” (3mm) of all
input/output pads.
If parts must be socketed, always use
flush-mount socket pins instead of high profile
sockets.
Evaluation boards are available for proto-typing and mea-
surements.
Additional
layout
information
is
available in the evaluation board literature.
+
-
CLC449
en
Vo
Rs
ibn
+
-
Vs
Rf
Rg
*
*
ibi
*
NF
10LOG
e
i R
4 TR
i
R ||R
4 T R ||R
4TR
ni
bn s
2
s
bi
f
g
2
f
g
s
2
=
+
() ++ ⋅
() +⋅
kk
k
Source Resistance (
Ω)
20
15
0
10
100
10000
10
5
1000



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