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LM4900MM 数据表(PDF) 3 Page - National Semiconductor (TI) |
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LM4900MM 数据表(HTML) 3 Page - National Semiconductor (TI) |
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3 / 19 page ![]() Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 6.0V Storage Temperature −65˚C to +150˚C Input Voltage −0.3V to V DD + 0.3V Power Dissipation (Note 3) Internally limited ESD Susceptibility (Note 4) 2000V ESD Susceptibility (Note 5) 200V Junction Temperature 150˚C Soldering Information Small Outline Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C See AN-450 “Surface Mounting and their Effects on Product Reliability” for other methods of soldering surface mount devices. Thermal Resistance θ JC (M08A) 35˚C/W θ JA (M08A) 170˚C/W θ JC (MUA08A) 56˚C/W θ JA (MUA08A) 190˚C/W θ JA (LDA08B) 67˚C/W Operating Ratings Temperature Range T MIN ≤ TA ≤ TMAX −40˚C ≤ T A ≤ +85˚C Supply Voltage 2.0V ≤ V DD ≤ 5.5V Electrical Characteristics (Note 1) (Note 2) The following specifications apply for V DD = 5V, for all available packages, unless otherwise specified. Limits apply for TA = 25˚C Symbol Parameter Conditions LM4900 Units (Limits) Typical (Note 6) Limit (Notes 7, 9) I DD Quiescent Power Supply Current V IN = 0V, IO = 0A (Note 8) 4 6.0 mA (max) I SD Shutdown Current V PIN1 =VDD 0.1 5 µA (max) V OS Output Offset Voltage V IN = 0V 5 50 mV (max) P O Output Power THD = 1% (max); f = 1kHz; R L =8Ω; 675 300 mW (min) THD+N Total Harmonic Distortion+Noise P O = 400 mWrms; AVD =2; RL =8Ω; 20Hz ≤ f ≤ 20kHz, BW < 80kHz 0.4 % PSRR Power Supply Rejection Ratio V RIPPLE = 200mV sine p-p dB f = 217Hz (Note 10) 70 f = 1KHz (Note 10) 67 f = 217Hz (Note 11) 55 f = 1KHz (Note 11) 55 Electrical Characteristics (Note 1) (Note 2) The following specifications apply for V DD = 3.3V, for all available packages, unless otherwise specified. Limits apply for TA = 25˚C Symbol Parameter Conditions LM4900 Units (Limits) Typical (Note 6) Limit (Notes 7, 9) I DD Quiescent Power Supply Current V IN = 0V, IO = 0A (Note 8) 3 5 mA (max) I SD Shutdown Current V PIN1 =VDD 0.1 3 µA (max) V OS Output Offset Voltage V IN = 0V 5 50 mV (max) P O Output Power THD = 1% (max); f = 1kHz; R L =8Ω; 265 mW (min) THD+N Total Harmonic Distortion+Noise P O = 250 mWrms; AVD =2; RL =8Ω; 20Hz ≤ f ≤ 20kHz, BW < 80kHz 0.4 % PSRR Power Supply Rejection Ratio V RIPPLE = 200mV sine p-p dB f = 217Hz (Note 10) 73 f = 1KHz (Note 10) 70 f = 217Hz (Note 11) 60 f = 1KHz (Note 11) 68 www.national.com 3 |
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