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LM4900MM 数据表(PDF) 13 Page - National Semiconductor (TI) |
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LM4900MM 数据表(HTML) 13 Page - National Semiconductor (TI) |
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13 / 19 page ![]() Application Information EXPOSED-DAP PACKAGE PCB MOUNTING CONSIDERATION The LM4900’s exposed-DAP (die-attach paddle) package (LD) provides a low thermal resistance between the die and the PCB to which the part is mounted and soldered. This allows rapid heat from the die to the surrounding PCB cop- per traces, ground plane, and surrounding air. This allows the LM4900LD to operate at higher output power levels in higher ambient temperatures than the MM package. Failing to optimize thermal design may compromise the high power performance and activate unwanted, though necessary, thermal shutdown protection. The LD package must have its DAP soldered to a copper pad on the PCB. The DAP’s PCB copper pad is connected to a large plane of continuous unbroken copper. This plane forms a thermal mass, heat sink, and radiation area. Place the heat sink area on either outside plane in the case of a two-sided PCB, or on an inner layer of a board with more than two layers. Connect the DAP copper pad to the inner layer or backside copper heat sink area with 2 vias. The via diameter should be 0.012in - 0.013in with a 1.27mm pitch. Ensure efficient thermal conductivity by plating through the vias. Best thermal performance is achieved with the largest prac- tical heat sink area. The power derating curve in the Typical Performance Characteristics shows the maximum power dissipation versus temperature for several different areas of heat sink area. Placing the majority of the heat sink area on another plane is preferred as heat is best dissipated through the bottom of the chip. Further detailed and specific informa- tion concerning PCB layout, fabrication, and mounting an LD (LLP) package is available from National Semiconductor’s Package Engineering Group under application note AN1187. BRIDGE CONFIGURATION EXPLANATION As shown in Figure 1, the LM4900 has two operational amplifiers internally, allowing for a few different amplifier configurations. The first amplifier’s gain is externally config- urable, while the second amplifier is internally fixed in a unity-gain, inverting configuration. The closed-loop gain of the first amplifier is set by selecting the ratio of R F to Ri while the second amplifier’s gain is fixed by the two internal 10 k Ω resistors. Figure 1 shows that the output of amplifier one serves as the input to amplifier two which results in both amplifiers producing signals identical in magnitude, but out of phase 180˚. Consequently, the differential gain for the IC is A VD =2*(RF/Ri) By driving the load differentially through outputs V o1 and Vo2, an amplifier configuration commonly referred to as “bridged mode” is established. Bridged mode operation is different from the classical single-ended amplifier configuration where one side of its load is connected to ground. A bridge amplifier design has a few distinct advantages over the single-ended configuration, as it provides differential drive to the load, thus doubling output swing for a specified supply voltage. Four times the output power is possible as compared to a single-ended amplifier under the same con- ditions. This increase in attainable output power assumes that the amplifier is not current limited or clipped. In order to choose an amplifier’s closed-loop gain without causing ex- cessive clipping, please refer to the Audio Power Amplifier Design section. A bridge configuration, such as the one used in LM4900, also creates a second advantage over single-ended amplifi- ers. Since the differential outputs, V o1 and Vo2, are biased at half-supply, no net DC voltage exists across the load. This eliminates the need for an output coupling capacitor which is required in a single supply, single-ended amplifier configura- tion. If an output coupling capacitor is not used in a single-ended configuration, the half-supply bias across the load would result in both increased internal lC power dissi- pation as well as permanent loudspeaker damage. POWER DISSIPATION Power dissipation is a major concern when designing a successful amplifier, whether the amplifier is bridged or single-ended. Equation 1 states the maximum power dissi- pation point for a bridge amplifier operating at a given supply voltage and driving a specified output load. P DMAX =(VDD) 2/(2 π2R L) Single-Ended (1) However, a direct consequence of the increased power de- livered to the load by a bridge amplifier is an increase in internal power dissipation point for a bridge amplifier oper- ating at the same conditions. P DMAX = 4(VDD) 2/(2 π2R L) Bridge Mode (2) Since the LM4900 has two operational amplifiers in one package, the maximum internal power dissipation is 4 times that of a single-ended amplifier. Even with this substantial increase in power dissipation, the LM4900 does not require heatsinking. From Equation 1, assuming a 5V power supply and an 8 Ω load, the maximum power dissipation point is 625 mW. The maximum power dissipation point obtained from Equation 2 must not be greater than the power dissi- pation that results from Equation 3: P DMAX =(TJMAX −TA)/θJA (3) For package MUA08A, θ JA = 190˚C/W. TJMAX = 150˚C for the LM4900. Depending on the ambient temperature, T A,of the system surroundings, Equation 3 can be used to find the maximum internal power dissipation supported by the IC packaging. If the result of Equation 2 is greater than that of Equation 3, then either the supply voltage must be de- creased, the load impedance increased, the ambient tem- perature reduced, or the θ JA reduced with heatsinking. In many cases larger traces near the output, V DD, and Gnd pins can be used to lower the θ JA. The larger areas of copper provide a form of heatsinking allowing a higher power dissi- pation. For the typical application of a 5V power supply, with an 8 Ω load, the maximum ambient temperature possible without violating the maximum junction temperature is ap- proximately 30˚C provided that device operation is around the maximum power dissipation point. Internal power dissi- pation is a function of output power. If typical operation is not around the maximum power dissipation point, the ambient temperature can be increased. Refer to the Typical Perfor- mance Characteristics curves for power dissipation infor- mation for lower output powers. www.national.com 13 |
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