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LA55-TP-SP27 数据表(PDF) 1 Page - LEM

部件名 LA55-TP-SP27
功能描述  Current Transducer
PDF  3 Pages
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制造商  LEM [LEM]
网页  http://www.lem.co.jp/HQ/en
标志 LEM - LEM

LA55-TP-SP27 数据表(HTML) 1 Page - LEM

  LA55-TP-SP27 Datasheet HTML 1Page - LEM LA55-TP-SP27 Datasheet HTML 2Page - LEM LA55-TP-SP27 Datasheet HTML 3Page - LEM  
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090616/4
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.
www.lem.com
Page 1/3
I
PN = 50 A
Features
Closed loop (compensated)
current transducer using the Hall
effect
Mounted on printed circuit board
Insulated plastic case recognized
according to UL 94-V0.
Special features
I
PM
= 0 .. ± 100 A
K
N
= 1 : 2000
V
d
= 3.6 kV
T
A
= - 40°C .. + 85°C
Potted.
Advantages
Excellent accuracy
Very good linearity
Low temperature drift
Optimized response time
Wide frequency bandwidth
No insertion losses
High immunity to external
interference
Current overload capability.
Applications
Single or three phases inverter
Propulsion and braking chopper
Propulsion converter
Auxiliart converter
Battery charger.
Application domain
Traction.
Current Transducer LA 55-TP/SP27
For the electronic measurement of currents: DC, AC, pulsed...,
with galvanic isolation between the primary circuit (high power) and
the secondary circuit (electronic circuit).
Electrical data
I
PN
Primary nominal current rms
50
A
I
PM
Primary current, measuring range
0 .. ± 100
A
R
M
Measuring resistance
R
M min
R
M max
with ± 12 V
@ ± 50 A
max
0
210
@ ± 100 A
max
0
30
with ± 15 V
@ ± 50 A
max
30
320
@ ± 100 A
max
30
90
I
SN
Secondary nominal current rms
25
mA
K
N
Conversion ratio
1 : 2000
V
C
Supply voltage (± 5 %)
± 12 .. 15
V
I
C
Current consumption
10 (@ ± 15 V)+ I
S mA
X
Accuracy @
I
PN , TA = 25°C
@ ± 15 V (± 5 %)
± 0.65
%
Accuracy - Dynamic performance data
@ ± 12 .. 15 V (± 5 %)
± 0.90
%
ε
L
Linearity error
< 0.15
%
Typ
Max
I
O
Offset current @
I
P = 0, TA = 25°C
± 0.1
mA
I
OM
Magnetic offset current 1) @
I
P = 0 and specified RM,
after an overload of 3 x
I
PN
± 0.2
mA
I
OT
Temperature variation of
I
O
- 25°C .. + 85°C
± 0.1 ± 0.3
mA
- 40°C .. - 25°C
± 0.2 ± 0.5
mA
t
ra
Reaction time to 10 % of
I
PN step
< 500
ns
t
r
Response time 2) to 90 % of
I
PN step
< 1
µs
di/dt di/dt accurately followed
> 200
A/µs
BW
Frequency bandwidth (- 1 dB)
DC .. 200
kHz
T
A
Ambient operating temperature
- 40 .. + 85
°C
General data
T
S
Ambient storage temperature
- 50 .. + 90
°C
R
S
Secondary coil resistance @
T
A = 85°C
140
m
Mass
35
g
Standards
EN 50155: 1995
Notes: 1) Result of the coercive field of the magnetic circuit
2)
With a di/dt of 100 A/µs.
16086


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