CPC1908J datasheet(3/7 Pages) IXYS

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INTEGRATED CIRCUITS DIVISION

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R10

CPC1908

Thermal Characteristics

2.1 Thermal Management

Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface

material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient

thermal resistance of 12.5°C/W.

2.2 Heat Sink Calculation

Higher load currents are possible by using lower thermal resistance heat sink combinations.

Parameter

Conditions

Symbol

Rating

Units

Thermal Resistance (Junction to Case)



0.35

°C/W

Thermal Resistance (Junction to Ambient)

Free Air



°C/W

Junction Temperature (Operating)

-40 to +100

°C

CA =

J - TA) IL(99)

•

D(99)

J = Junction Temperature (°C), TJ ≤ 100°C *

A = Ambient Temperature (°C)

L(99) = Load Current with Case Temperature @ 99°C (ADC)

L = Desired Operating Load Current (ADC), IL ≤ IL(MAX)

JC = Thermal Resistance, Junction to Case (°C/W) = 0.35°C/W

CA = Thermal Resistance of Heat Sink & Thermal Interface Material , Case to Ambient (°C/W)

D(99) = Maximum power dissipation with case temperature held at 99ºC = 2.86W

* Elevated junction temperature reduces semiconductor lifetime.

NOTE: The exposed surface of the DCB substrate is not to be soldered.

Heat Sink Rating

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