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MP4513 数据表(PDF) 5 Page - Toshiba Semiconductor |
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MP4513 数据表(HTML) 5 Page - Toshiba Semiconductor |
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5 / 6 page ![]() MP4513 2002-11-20 5 Collector-emitter voltage VCE (V) Safe Operating Area rth – tw Pulse width tw (s) Ambient temperature Ta (°C) PT – Ta Total power dissipation PT (W) ∆Tj – PT 0.1 1 0.05 0.03 0.3 0.5 1 3 5 10 3 10 30 100 300 20 IC max (pulsed)* 10 ms* VCEO max 1 ms* 100 µs* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0 8 40 2 4 6 80 120 160 200 0 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (4) (3) (2) (1) Circuit board 0.001 0.01 0.1 1 10 100 1000 0.3 (3) (2) (1) 1 3 10 30 100 300 (4) -No heat sink and attached on a circuit board- (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 50 5 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. Circuit board 2 4 6 8 0 160 40 80 120 10 0 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation (1) (2) (3) (4) Circuit board Attached on a circuit board |
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