MP4513 datasheet(1/6 Pages) TOSHIBA

部件名	MP4513

功能描述	TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)

PDF	6 Pages

Scroll/Zoom	100%

制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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MP4513

2002-11-20

1

TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)

MP4513

High Power Switching Applications.

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching.

· Package with heat sink isolated to lead (SIP 12 pin)

· High collector power dissipation (4 devices operation)

: PT = 5 W (Ta = 25°C)

· High collector current: IC (DC) = 5 A (max)

· High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A)

· Diode included for absorbing fly-back voltage.

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

100

V

Collector-emitter voltage

VCEO

100

V

Emitter-base voltage

VEBO

5

V

DC

IC

5

Collector current

Pulse

ICP

8

A

Continuous base current

IB

0.1

A

Collector power dissipation

(1 device operation, Ta = 25°C)

PC

3.0

W

Ta = 25°C

5.0

Collector power

dissipation

(4 devices operation)

Tc = 25°C

PT

25

W

Isolation voltage

VIsol

1000

V

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32B1A

Weight: 6.0 g (typ.)

1

R1 R2

7

R1 ≈ 5 kΩ

R2 ≈ 150 Ω

6

12

8

5

2

3

10

4

9

11

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MP4513 数据表(PDF) 1 Page - Toshiba Semiconductor

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MP4513 数据表(PDF) 1 Page - Toshiba Semiconductor

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类似零件编号 - MP4513

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