DMN3010LFG datasheet(2/7 Pages) DIODES

2 / 7 page

DMN3010LFG

Document number: DS36195 Rev. 7 - 2

2 of 7

www.diodes.com

June 2015

DMN3010LFG

POWERDI is a registered trademark of Diodes Incorporated

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

8.5

t<10s

TA = +25°C

TA = +70°C

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TC = +25°C

TC = +100°C

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

Avalanche Current (Note 7) L = 0.1mH

IAS

12.7

Avalanche Energy (Note 7) L = 0.1mH

EAS

8.1

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

137

°C/W

t < 10s

°C/W

Total Power Dissipation (Note 6)

2.4

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t < 10s

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

Thermal Resistance, Junction to Case (Note 6)

RθJC

4.8

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 30V, VGS = 0V

Zero Gate Voltage Drain Current TJ = +150°C (Note 9)

—

100

μA

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1.0

—

2.5

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

6.5

8.5

VGS = 10V, ID = 18A

—

10.5

VGS = 4.5V, ID = 16A

Diode Forward Voltage

VSD

—

0.75

1.0

VGS = 0V, IS = 1A

On State Drain Current (Note 9)

ID(ON)

—

VDS ≦5V, VGS = 4.5V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

2,075

4,150

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

190

380

Reverse Transfer Capacitance

Crss

—

138

276

Gate Resistance

—

2.4

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

—

16.1

VDS = 15V, ID = 18A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

Qgs

—

6.1

Gate-Drain Charge

Qgd

—

5.9

Turn-On Delay Time

tD(on)

—

4.5

VDS = 15V, VGS = 10V,

RL = 0.83Ω, RGEN = 3Ω,

Turn-On Rise Time

—

19.6

Turn-Off Delay Time

tD(off)

—

Turn-Off Fall Time

—

10.7

Reverse Recovery Time

trr

—

13.7

IF=15A, di/dt=500A/µs

Reverse Recovery Charge

Qrr

—

18.3

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.

7. UIS in production with L = 1mH, TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

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