DMN3010LFG

Document number: DS36195 Rev. 7 - 2

4 of 7

www.diodes.com

June 2015

© Diodes Incorporated

DMN3010LFG

POWERDI is a registered trademark of Diodes Incorporated

T , AMBIENT TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A



0

0.5

1

1.5

2

2.5

-50

-25

0

25

50

75

100

125

150

I = 1mA

D

I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

T = 25°C

A

0

0.3

0.6

0.9

1.2

1.5

0

5

10

15

20

25

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

10

100

1000

10000

0

5

10

15

20

25

30

f = 1MHz

C

oss

Q

(nC)

Figure 10 Gate Charge

0

2

4

6

8

10

0

5

10

15

20

25

30

35

40

V

= 15V

I =

A

DS

D

18

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 11 SOA, Safe Operation Area

Limited

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

T

= 150°C

J (m ax )

T = 25°C

A

V

= 4.5V

GS

Single Pulse

DUT on 1 * MRP Board