DMN3015LSD datasheet(2/6 Pages) DIODES

2 / 6 page

DMN3015LSD

Document number: DS36300 Rev. 2 - 2

2 of 6

www.diodes.com

July 2014

DMN3015LSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

8.4

6.8

t<10s

TA = +25°C

TA = +70°C

11.0

9.0

Maximum Body Diode Forward Current (Note 6)

2.5

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

Avalanche Current (Notes 7) L = 0.1mH

IAS

Avalanche Energy (Notes 7) L = 0.1mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

1.2

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

102

°C/W

t<10s

Total Power Dissipation (Note 6)

TA = +25°C

1.6

TA = +70°C

1.0

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

14.5

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

⎯

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

⎯

µA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

⎯

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.3

⎯

2.5

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

⎯

mΩ

VGS = 10V, ID = 12A

⎯

VGS = 4.5V, ID = 10A

Diode Forward Voltage

VSD

⎯

0.7

1.0

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

⎯

1415

⎯

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

⎯

119

⎯

Reverse Transfer Capacitance

Crss

⎯

Gate Resistance

⎯

2.6

3.2

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

⎯

11.3

⎯

VDS = 15V, ID = 12A

Total Gate Charge (VGS = 10V)

⎯

25.1

⎯

Gate-Source Charge

Qgs

⎯

3.5

⎯

Gate-Drain Charge

Qgd

⎯

3.6

⎯

Turn-On Delay Time

tD(on)

⎯

4.8

⎯

VDD = 15V, VGS = 10V,

RL = 1.25Ω, RG = 3Ω,

Turn-On Rise Time

⎯

16.5

⎯

Turn-Off Delay Time

tD(off)

⎯

26.1

⎯

Turn-Off Fall Time

⎯

5.6

⎯

Body Diode Reverse Recovery Time

trr

⎯

8.5

⎯

IS = 12A, dI/dt = 500A/μs

Body Diode Reverse Recovery Charge

Qrr

⎯

7.0

⎯

IS = 12A, dI/dt = 500A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. UIS in production with L = 0.1mH, starting TA = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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