DMN3015LSD

Document number: DS36300 Rev. 2 - 2

4 of 6

www.diodes.com

July 2014

© Diodes Incorporated

DMN3015LSD

0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1.0

1.2

V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

10

100

1000

10000

0

2

4

6

8

1012 1416 1820

Q(nC)

Figure 10 Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

25

V

= 15V

I=

A

DS

D

12

V , DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

DS

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

0.01

0.1

1

10

100

R

Limited

DS(on)

0.1

1

10

100

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P= 10ms

W

P = 1ms

W

P = 100µs

W