DMNH6008SCTQ

Document number: DS38700 Rev. 2 - 2

2 of 6

www.diodes.com

April 2016

© Diodes Incorporated

DMNH6008SCTQ

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

20

V

Steady

State

130

90

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

200

A

Maximum Continuous Body Diode Forward Current (Note 6)

80

A

Avalanche Current (Note 7) L=0.1mH

62

A

Avalanche Energy (Note 7) L=0.1mH

190

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

210

100

W

Thermal Resistance, Junction to Case (Note 6)

0.7

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

1

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

2

—

4

V

Static Drain-Source On-Resistance

—

6.0

8.0

m

Ω

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

2,596

—

pF

f = 1.0MHz

Output Capacitance

—

437

—

Reverse Transfer Capacitance

—

118

—

Gate Resistance

—

2.0

—

Ω

—

21

—

nC



—

40

—

Gate-Source Charge

—

8.3

—

Gate-Drain Charge

—

11.8

—

Turn-On Delay Time

—

5.7

—

ns

Turn-On Rise Time

—

5.0

—

Turn-Off Delay Time

—

15.6

—

Turn-Off Fall Time

—

3.4

—

Reverse Recovery Time

—

33

—

ns

Reverse Recovery Charge

—

33

—

nC

Notes:

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.