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DMNH6008SCTQ 数据表(PDF) 4 Page - Diodes Incorporated

部件名 DMNH6008SCTQ
功能描述  Low Input Capacitance
PDF  6 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DMNH6008SCTQ 数据表(HTML) 4 Page - Diodes Incorporated

  DMNH6008SCTQ Datasheet HTML 1Page - Diodes Incorporated DMNH6008SCTQ Datasheet HTML 2Page - Diodes Incorporated DMNH6008SCTQ Datasheet HTML 3Page - Diodes Incorporated DMNH6008SCTQ Datasheet HTML 4Page - Diodes Incorporated DMNH6008SCTQ Datasheet HTML 5Page - Diodes Incorporated DMNH6008SCTQ Datasheet HTML 6Page - Diodes Incorporated  
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DMNH6008SCTQ
Document number: DS38700 Rev. 2 - 2
4 of 6
www.diodes.com
April 2016
© Diodes Incorporated
DMNH6008SCTQ
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 10V, ID = 20A
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125
oC
T
J = 85
oC
T
J = 25
oC
T
J = -55
oC
V
GS = 0V
T
J = 150
oC
T
J = 175
oC
10
100
1000
10000
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
10
0
10
20
30
40
Q
g (nC)
Figure 11. Gate Charge
V
DS = 30V, ID = 20A
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10ms
P
W =100µs
R
DS(ON) Limited
P
W =1ms
P
W =100ms
T
J(Max) = 175℃ TC = 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS = 10V
P
W =1s
P
W =10µs
P
W =1µs
0
0.5
1
1.5
2
2.5
3
3.5
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA



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