DAC7545LP datasheet(3/13 Pages) TI1

3 / 13 page

DAC7545

SBAS150A

www.ti.com

ELECTRICAL CHARACTERISTICS

VREF = +10V, VOUT 1 = 0V, and ACOM = DCOM, unless otherwise specified.

NOTES: (1) Temperature ranges—J, K, L, and GL: –40

°C to +85°C. (2) This includes the effect of 5ppm max, gain TC. (3) Ensured but not tested. (4) DB

0-DB11 = 0V

to VDD or VDD to 0V. (5) Typical. (6) Minimum. (7) Logic inputs are MOS gates. Typical input current (+25°C) is less than 1nA. (8) Sample tested at +25°C to ensure

compliance.

DAC7545

VDD = +5V

VDD = +15V

PARAMETER

GRADE

TA = +25°CTMAX-TMIN(1)

UNITS

TEST CONDITIONS/COMMENTS

STATIC PERFORMANCE

Resolution

All

Bits

Accuracy

±2

±2LSB

±1

±1LSB

±1/2

LSB

±1/2

LSB

Differential Nonlinearity

±4

LSB

10-Bit Monotonic, TMIN to TMAX

±1

LSB

10-Bit Monotonic, TMIN to TMAX

±1

LSB

12-Bit Monotonic, TMIN to TMAX

±1

LSB

12-Bit Monotonic, TMIN to TMAX

Gain Error (with internal RFB)(2)

±20

±25

LSB

DAC register loaded with FFFH.

±10

±15

LSB

Gain error is adjustable using

±5

±6

±10

LSB

the circuits in Figures 2 and 3.

±2

±3

±6

±7LSB

Gain Temperature Coefficient(3)

(

∆Gain/∆Temperature)

All

±5

±10

ppm/

°C Typical Value is 2ppm/°C

for VDD = +5

DC Supply Rejection(3)

(

∆Gain/∆V

DD)

All

0.015

0.03

0.01

0.02

%/%

∆V

DD ± 5%

Output Leakage Current at Out 1

J, K, L, GL

DB0-DB11 = 0V; WR, CS = 0V

DYNAMIC PERFORMANCE

Current Settling Time(3)

All

µs

To 1/2 LSB. Out 1 Load = 100

Ω

DAC output measured from

falling edge of WR. CS = 0V.

Propagation Delay(3) (from digital input

All

change to 90% of final analog output)

300

250

Out 1 Load = 100

Ω. C

EXT = 13pF

(4)

Glitch Energy

All

400

250

nV-s(5)

VREF = ACOM

AC Feedback at IOUT 1

All

mVp-p(5) VREF = ±10V, 10kHz Sine Wave

REFERENCE INPUT

Input Resistance (pin 19 to AGND)

All

Ω(6)

Input Resistance TC = 300ppm/

°C(5)

Ω

AC OUTPUTS

Output Capacitance(3): COUT 1

All

DB0-DB11 = 0V; WR, CS = 0V

COUT 2

All

200

DB0-DB11 = VDD; WR, CS = 0V

DIGITAL INPUTS

VIH (Input HIGH Voltage)

All

2.4

13.5

V(6)

VIL (Input LOW Voltage)

All

0.8

1.5

IIN (Input Current)(7)

All

±1

±10

±1

±10

µAV

IN = 0V or VDD

Input Capacitance(3): DB0-DB11

All

VIN = 0V

WR, CS

All

VIN = 0V

SWITCHING CHARACTERISTICS(8)

Chip Select to Write Setup Time, tCS

All

280

380

180

200

ns(6)

See Timing Diagram

200

270

120

150

ns(5)

Chip Select to Write Hold Time, tCH

All

ns(6)

Write Pulse Width, tWR

All

250

400

160

240

ns(6)

tCS ≥ tWR, tCH ≥ 0

175

280

100

170

ns(5)

Data Setup Time, tDS

All

140

210

120

ns(6)

100

150

ns(5)

Data Hold Time, tDH

All

ns(6)

POWER SUPPLY, IDD

All

All Digital Inputs VIL or VIH

All

100

500

100

500

µA

All Digital Inputs 0V or VDD

All

µA(5)

All Digital Inputs 0V or VDD

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