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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
2
isc Silicon NPN Darlington Power Transistor
T2141F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
300
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC=1mA; IE= 0
400
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 16mA
1.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC=6A; IB= 24mA
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=6A; IB= 24mA
2.5
V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
100
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
mA
hFE
DC Current Gain
IB= 5mA; VCE= 2V
600
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