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INCHANGE Semiconductor
isc Product Specification
isc Website:www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor
T2141F
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·
High DC Current Gain
: hFE= 600(Min.)@ IB= 5mA
·
Low Collector Saturation Voltage
: VCE(sat)= 1.8V(Max.)@ IC= 4A
APPLICATIONS
·
Switching for dynamotor excitation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃