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2

R02

CPC3980

Absolute Maximum Ratings are stress ratings. Stresses in

excess of these ratings can cause permanent damage to the

device. Functional operation of the device at conditions beyond

those indicated in the operational sections of this data sheet is

not implied.

Absolute Maximum Ratings @ 25ºC

Electrical Characteristics @ 25ºC (Unless Otherwise Noted)

Parameter

Ratings

Units

Drain-to-Source Voltage

800

V

Gate-to-Source Voltage

±15

V

Pulsed Drain Current

150

mA

1.8

W

Operational Temperature

-55 to +125

ºC

Junction Temperature, Maximum

+125

ºC

Storage Temperature

-55 to +125

ºC

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Drain-to-Source Breakdown Voltage

BV

DSX

V

800

-

-

V

Gate-to-Source Off Voltage

V

GS(off)

V

-1.4

-

-3.1

V

Change in V

dV

V

-

-

4.5

mV/ºC

Gate Body Leakage Current

I

GSS

V

-

-

100

nA

Drain-to-Source Leakage Current

I

D(off)

V

-

-

1

µA

Saturated Drain-to-Source Current

I

DSS

V

100

-

-

mA

Static Drain-to-Source On-State Resistance

R

DS(on)

V

--

45



Change in R

dR

-

-

2.5

%/ºC

Forward Transconductance

G

fs

I

100

-

-

m

Input Capacitance

C

ISS

V

V

f= 1MHz

-

115

-pF

Common Source Output Capacitance

C

OSS

5

Reverse Transfer Capacitance

C

RSS

3

Source-Drain Diode Voltage Drop

V

SD

V

-

0.72

1

V

Thermal Resistance

Junction to Ambient



JA

-

-

55

-

ºC/W

Junction to Case



JC

-

-

23

-