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CPC3980Z 数据表(PDF) 3 Page - IXYS Corporation |
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CPC3980Z 数据表(HTML) 3 Page - IXYS Corporation |
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3 / 5 page ![]() INTEGRATED CIRCUITS DIVISION CPC3980 www.ixysic.com 3 R02 *The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact our application department. PERFORMANCE DATA @25ºC (Unless Otherwise Noted)* Temperature (ºC) -50 -25 0 25 50 75 100 125 -2.1 -2.0 -1.9 -1.8 -1.7 -1.6 Threshold Voltage vs. Temperature (I D=1 A, VDS=10V) Temperature (ºC) -50 -25 0 25 50 75 100 125 20 30 40 50 60 70 On-Resistance vs. Temperature (I D=100mA, VGS=5V) Temperature (ºC) 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 Power Dissipation vs. Ambient Temperature Voltage (V) 0.1 1 10 100 1000 0.001 0.01 0.1 1 Forward Safe Operating Bias (V GS=0, DC Load) Limited by device channel saturation Limited by device R DS(on) V DS (V) 02 4 6 8 10 0 20 40 60 80 100 Output Characteristics V GS= -1 V GS= -1.2 V GS= -1.4 V GS= -1.6 I D (mA) 0 20 40 60 80 100 20 25 30 35 40 On-Resistance vs. Drain Current (V GS=0V) V GS (V) -2.5 -2.0 -1.5 -1.0 -0.5 0 20 40 60 80 100 120 Input Admittance (V DS=10V) 85ºC 55ºC 25ºC -40ºC I D (mA) 0 20 40 60 80 100 0 50 100 150 200 250 300 Transconductance vs. Drain Current (V DS=10V) -40ºC 25ºC 55ºC 85ºC V DS (V) Capacitance vs. Drain-Source Voltage (V GS=3.5V) 0 5 10 15 20 25 30 1 10 100 1000 C ISS C RSS C OSS |
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