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CPC5602C 数据表(PDF) 2 Page - IXYS Corporation |
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CPC5602C 数据表(HTML) 2 Page - IXYS Corporation |
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2 / 5 page ![]() INTEGRATED CIRCUITS DIVISION www.ixysic.com 2 R10 CPC5602 Parameter Symbol Conditions Min Typ Max Units Gate-to-Source Off Voltage V GS(off) I D= 2µA, VDS=10V, VDS=100V -2 -2.62 -3.6 V Drain-to-Source Leakage Current I DS(off) V GS= -5V, VDS=190V - - 20 nA V GS= -5V, VDS=350V - - 1 A Drain Current I D V GS= -2.7V, VDS=5V, VDS=50V - - 5 mA V GS= -0.57V, VDS=5V 130 - - mA On-Resistance R DS(on) V GS= -0.35V, IDS=50mA - 8 14 Gate Leakage Current I GSS V GS=10V, VGS=-10V - - 0.1 A Gate Capacitance C ISS V DS= VGS=0V - - 300 pF Electrical Characteristics @25oC (Unless Otherwise Specified) Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Absolute Maximum Ratings @ 25ºC Thermal Characteristics Parameter Symbol Conditions Min Typ Max Units Thermal Resistance RJC - - - 14 ºC/W Parameter Symbol Ratings Units Drain-to-Source Voltage V DS 350 V Gate-to-Source Voltage V GS ±20 V Total Package Dissipation P 2.5 W Operational Temperature T A -40 to +85 oC Storage Temperature T A -40 to +125 oC |
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