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DS-CPC5602-R10

1

CPC5602

N-Channel Depletion Mode FET

Applications

Features

Description

Ordering Information

Package Pinout

Data Access Arrangement (DAA)

DS(on)

at Cold Temperatures

 (Typical) @ 25°C

The CPC5602 is an N-channel depletion mode Field

Effect Transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third generation vertical

DMOS process. The third generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. The vertical

DMOS process yields a highly reliable device,

particularly in difficult application environments such

as telecommunications, security, and power supplies.

One of the primary applications for the CPC5602 is

as a linear regulator/hook switch for the LITELINK

family of Data Access Arrangements (DAA) Devices

CPC5620A, CPC5621A, and CPC5622A.

The CPC5602 has a typical on-resistance of 8

, a

drain-to-source voltage of 350V, and is available in an

SOT-223 package. As with all MOS devices, the FET

structure prevents thermal runaway and

thermal-induced secondary breakdown.

Pin Number

Name

1GATE

2

DRAIN

3

SOURCE

4

DRAIN

Parameter

Rating

Units

Drain-to-Source Voltage - V

DS

350

V

Max On-Resistance - R

DS(on)

14



Max Power

2.5

W

D

G

D

S

4

1

23

Part #

Description

CPC5602CTR

N-Channel Depletion Mode FET, SOT-223 Pkg.

Tape and Reel (1000/Reel)