Linear Integrated Systems

1

7

35

BOTTOM VIEW

2

6

22 X 20 MILS

G1

S2

S1

G2

D2

D1

G1

S2

S1

G2

D1

D2

ELECTRICAL CHARACTERISTICS @ 25

SYMBOL

CHARACTERISTICS

LS830

LS831

LS832

LS833

UNITS

CONDITIONS

|

∆V

GS1-2

/

∆T| max. Drift vs. Temperature

5

10

20

75

µV/°CV

DG

= 10V

I

D

= 30

µA

T

A

= -55

°C to +125°C

|V

GS1-2

| max.

Offset Voltage

25

25

25

25

mV

V

DG

= 10V

I

D

= 30

µA

-I

G

max

Operating

0.1

0.1

0.1

0.5

pA

-I

G

max

High Temperature

0.1

0.1

0.1

0.5

nA

T

A

= +125

°C

-I

GSS

At Full Conduction

0.2

0.2

0.2

1.0

pA

-I

GSS

High Temperature

0.5

0.5

0.5

1.0

nA

V

GS

= 0

V

GS

= -20V

T

A

= +125

°C

ULTRA LOW LEAKAGE LOW DRIFT

MONOLITHIC DUAL N-CHANNEL JFET

LS830 LS831 LS832 LS833

FEATURES

ULTRA LOW DRIFT

|

∆V

GS1-2

/

∆T|= 5µV/°C max.

ULTRA LOW LEAKAGE

I

G

= 80fA TYP.

LOW NOISE

e

n

= 70nV/

√Hz TYP.

LOW CAPACITANCE

C

ISS

= 3pf MAX.

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25

°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

-65

° to +150°C

Operating Junction Temperature

+150

°C

Maximum Voltage and Current for Each Transistor NOTE 1

-V

GSS

Gate Voltage to Drain or Source

40V

-V

DSO

Drain to Source Voltage

40V

-I

G(f)

Gate Forward Current

10mA

-I

G

Gate Reverse Current

10

µA

Maximum Power Dissipation

Device Dissipation @ Free Air - Total

40mW @ +125

°C

SYMBOL

CHARACTERISTICS

MIN.

TYP.

MAX.

UNITS

CONDITIONS

BV

GSS

Breakdown Voltage

40

60

--

V

V

DS

= 0

I

D

= 1nA

BV

GGO

Gate-to-Gate Breakdown

40

--

--

V

I

G

= 1nA

I

D

= 0

I

S

= 0

TRANSCONDUCTANCE

Y

fss

Full Conduction

70

300

500

µmho V

DG

= 10V

V

GS

= 0

f= 1kHz

Y

fs

Typical Operation

50

100

200

µmho V

DG

= 10V

I

D

= 30

µA

f= 1kHz

|Y

fs1-2

/Y

fs

|

Mismatch

--

1

5

%

DRAIN CURRENT

I

DSS

Full Conduction

60

400

1000

µAV

DG

= 10V

V

GS

= 0

|I

DSS1-2

/I

DSS

|

Mismatch at Full Conduction

--

2

5

%

GATE VOLTAGE

V

GS

(off) or V

P

Pinchoff Voltage

0.6

2

4.5

V

V

DS

= 10V

I

D

= 1nA

V

GS

Operating Range

--

--

4

V

V

DG

= 10V

I

D

= 30

µA

GATE CURRENT

I

GGO

Gate-to-Gate Leakage

--

1

--

pA

V

GG

= 20V