SYMBOL

CHARACTERISTICS

MIN.

TYP.

MAX. UNITS

CONDITIONS

OUTPUT CONDUCTANCE

Y

OSS

Full Conduction

--

--

5

µmho

V

DG

= 10V

V

GS

= 0

Y

OS

Operating

--

--

0.5

µmho

V

DG

= 10V

I

D

= 30

µA

|Y

OS1-2

|

Differential

--

--

0.1

µmho

COMMON MODE REJECTION

CMR

-20 log |

∆V

GS1-2

/

∆V

DS

|--

90

--

dB

∆V

DS

= 10 to 20V

I

D

= 30

µA

CMR

-20 log |

∆V

GS1-2

/

∆V

DS

|--

90

--

dB

∆V

DS

= 5 to 10V

I

D

= 30

µA

NOISE

NF

Figure

--

--

1

dB

V

DS

= 10V

V

GS

= 0

R

G

= 10M

Ω

f= 100Hz

NBW= 6Hz

e

n

Voltage

--

20

70

nV/

√Hz V

DG

= 10V

I

D

= 30

µA f= 10Hz

NBW= 1Hz

CAPACITANCE

C

ISS

Input

--

--

3

pF

V

DS

= 10V

V

GS

= 0

f= 1MHz

C

RSS

Reverse Transfer

--

--

1.5

pF

V

DS

= 10V

V

GS

= 0

f= 1MHz

C

DD

Drain-to-Drain

--

--

0.1

pF

V

DG

= 10V

I

D

= 30

µA

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.

TO-71

Six Lead

0.230

0.209

DIA.

DIA.

0.195

0.175

0.030

MAX.

0.500 MIN.

0.150

0.115

0.019

0.016

DIA.

6 LEADS

3

2

1

8

4

5

6

0.046

0.036

45°

0.048

0.028

0.100

0.050

7

TO-78

0.335

0.370

0.305

0.335

0.016

0.019

0.165

0.185

0.040

MAX.

DIM. A

0.016

0.021

DIM. B

MIN. 0.500

0.200

0.100

0.100

0.028

0.034

45°

1

2 3 4

5

6

7

8

0.029

0.045

SEATING

PLANE

S1 1

2

3

45

6

7

8

D1

SS

G1

S2

G2

SS

D2

P-DIP

S1 1

2

3

45

6

7

8

D1

SS

G1

S2

G2

SS

D2

0.150

0.158

(3.81)

(4.01)

0.188

0.197

0.228

0.244

(5.79)

(6.20)

SOIC

0.320

0.290

(8.13)

(7.37)

0.405

MAX.

(10.29)

(4.78)

(5.00)