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DS26LS32CM 数据表(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 DS26LS32CM
功能描述  Quad Differential Line Receivers
PDF  8 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

DS26LS32CM 数据表(HTML) 3 Page - National Semiconductor (TI)

  DS26LS32CM Datasheet HTML 1Page - National Semiconductor (TI) DS26LS32CM Datasheet HTML 2Page - National Semiconductor (TI) DS26LS32CM Datasheet HTML 3Page - National Semiconductor (TI) DS26LS32CM Datasheet HTML 4Page - National Semiconductor (TI) DS26LS32CM Datasheet HTML 5Page - National Semiconductor (TI) DS26LS32CM Datasheet HTML 6Page - National Semiconductor (TI) DS26LS32CM Datasheet HTML 7Page - National Semiconductor (TI) DS26LS32CM Datasheet HTML 8Page - National Semiconductor (TI)  
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Absolute Maximum Ratings (Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
7V
Common-Mode Range
±25V
Differential Input Voltage
±25V
Enable Voltage
7V
Output Sink Current
50 mA
Maximum Power Dissipation (Note 1) at 25˚C
Cavity Package
1433 mW
Molded Dip Package
1362 mW
SO Package DS26LS32
1002 mW
DS26LS32A
1051 mW
Storage Temperature Range
−65˚C to
+165˚C
Lead Temperature (Soldering, 4 seconds)
260˚C
Operating Conditions
Min
Max
Units
Supply Voltage, (V
CC)
DS26LS32M, DS26LS33M
4.5
5.5
V
(MIL)
DS26LS32C
4.75
5.25
V
DS26LS32AC
(COML)
Temperature, (T
A)
DS26LS32M, DS26LS33M
−55
+125
˚C
(MIL)
DS26LS32C
0
+70
˚C
DS26LS32AC
(COML)
Note 1: Derate cavity package 9.6 mW/˚C above 25˚C; derate molded DIP
package 10.9 mW/˚C above 25˚C.
Note 2: Derate SO Package 8.01 mW/˚C for DS26LS32
8.41 mW/˚C for DS26LS32A
Electrical Characteristics (Notes 4, 5, 6)
over the operating temperature range unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
TH
Differential Input
V
OUT = VOH
DS26LS32, DS26LS32A, −7V
≤ V
CM ≤ +7V
−0.2
±0.07
0.2
V
Voltage
or V
OL
DS26LS33, DS26LS33A, −15V
≤ V
CM +15V
−0.5
±0.14
0.5
V
R
IN
Input Resistance
−15V
≤ V
CM ≤ +15V (One Input AC GND)
6.0
8.5
k
I
IN
Input Current (Under
V
IN = 15V, Other Input −15V ≤ VIN ≤ +15V
2.3
mA
Test)
V
IN = −15V, Other Input −15V ≤ VIN ≤ +15V
−2.8
mA
V
OH
Output High Voltage
V
CC = MIN, ∆VIN = 1V,
Commercial
2.7
4.2
V
V
ENABLE = 0.8V, IOH = −440 µA
Military
2.5
4.2
V
V
OL
Output Low Voltage
V
CC = Min, ∆VIN = −1V,
I
OL = 4 mA
0.4
V
V
ENABLE = 0.8V
I
OL = 8 mA
0.45
V
V
IL
Enable Low Voltage
0.8
V
V
IH
Enable High Voltage
2.0
V
V
I
Enable Clamp
V
CC = Min, IIN = −18 mA
−1.5
V
Voltage
I
O
OFF-State (High
V
CC = Max
V
O = 2.4V
20
µA
Impedance) Output
V
O = 0.4V
−20
µA
Current
I
IL
Enable Low Current
V
IN = 0.4V
−0.36
mA
I
IH
Enable High Current
V
IN = 2.7V
20
µA
I
SC
Output Short-Circuit
V
O = 0V, VCC = Max, ∆VIN = 1V
−15
−85
mA
Current
I
CC
Power Supply
V
CC = Max, All VIN = GND,
DS26LS32, DS26LS32A
52
70
mA
Current
Outputs Disabled
DS26LS33, DS26LS33A
57
80
mA
I
I
Input High Current
V
IN = 5.5V
100
µA
V
HYST
Input Hysteresis
T
A = 25˚C, VCC = 5V,
DS26LS32, DS26S32A
100
mV
V
CM = 0V
DS26LS33, DS26LS33A
200
mV
Note 3: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device
should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 4: All currents into device pins are shown as positive, all currents out of device pins are shown as negative, all voltages are referenced to ground, unless oth-
erwise specified. All values shown as max or min are so classified on absolute value basis.
Note 5: All typical values are VCC = 5V, TA = 25˚C.
Note 6: Only one output at a time should be shorted.
www.national.com
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