BUW51 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUW51

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 25mH

200

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.25A

0.8

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 1A

0.9

VBE(sat)

Base-Emitter Saturation Voltage

IC= 10A; IB= 1A

1.4

ICER

Collector Cutoff Current

VCE= VCEV; RBE= 10Ω

VCE= VCEV; RBE= 10Ω;TC=100℃

0.5

2.5

ICEV

Collector Cutoff Current

VCE= VCEV; VBE= -1.5V

VCE= VCEV; VBE= -1.5V;TC=100℃

0.5

2.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

Switching times; Resistive Load

Rise Time

IC= 14A; IB1= 1.7A; VCC= 160V;

VBB= -5V; RB2= 1.4Ω; tp= 30μs

0.6

μs

Storage Time

1.4

μs

Fall Time

0.3

μs

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