BUW51 datasheet(1/2 Pages) ISC

部件名	BUW51

功能描述	isc Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

BUW51

DESCRIPTION

·High Current Capability

·Fast Switching Speed

·Low Saturation Voltage and High Gain

APPLICATIONS

·Designed for use in general purpose power amplifier

applications.

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage

(VBE= -1.5V)

300

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

20

A

ICM

Collector Current-Peak

28

A

IB

Base Current-Continuous

4

A

IBM

Base Current-peak

7

A

PC

Collector Power Dissipation

@TC=25℃

150

W

Tj

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

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