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IPS511G 数据表(PDF) 4 Page - International Rectifier

部件名 IPS511G
功能描述  FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
PDF  11 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IPS511G 数据表(HTML) 4 Page - International Rectifier

  IPS511G Datasheet HTML 1Page - International Rectifier IPS511G Datasheet HTML 2Page - International Rectifier IPS511G Datasheet HTML 3Page - International Rectifier IPS511G Datasheet HTML 4Page - International Rectifier IPS511G Datasheet HTML 5Page - International Rectifier IPS511G Datasheet HTML 6Page - International Rectifier IPS511G Datasheet HTML 7Page - International Rectifier IPS511G Datasheet HTML 8Page - International Rectifier IPS511G Datasheet HTML 9Page - International Rectifier Next Button
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IPS511G/IPS512G
4
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Lead Assignments
Part Number
8 Lead SOIC
IPS511G
IPS512G
1
GND IN
DG OUT
Vcc Vcc Vcc Vcc
16 Lead SOIC
1
In1 Gnd1 Vcc Vcc Vcc Vcc Out2 Dg2
Dg1 Out1 Vcc Vcc Vcc Vcc Gnd2 In2
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ilim
Internal current limit
357
A
Vout = 0V
Tsd+
Over-temp. positive going threshold
165
oC
See fig. 2
Tsd-
Over-temp. negative going threshold
158
oC
See fig. 2
Vsc
Short-circuit detection voltage (3)
2
3
4
V
See fig. 2
Vopen load Open load detection threshold
2
3
4
V
Protection Characteristics
(3) Referenced to Vcc
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5.6Ω, Tj = 25
oC, (unless otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Tdon
Turn-on delay time
7
50
Tr1
Rise time to Vout = Vcc - 5V
10
50
Tr2
Rise time from the end of TR1 to
Vout = 90% of Vcc
45
95
dV/dt (on) Turn ON dV/dt
1.3
4
V/
µs
Eon
Turn ON energy
400
µJ
Tdoff
Turn-off delay time
15
50
Tf
Fall time to Vout = 10% of Vcc
10
50
dV/dt (off) Turn OFF dV/dt
2
6
V/
µs
Eoff
Turn OFF energy
80
µJ
Tdiag
Vout to Vdiag propagation delay
5
15
µs
See figure 3
µs
µs
See figure 4



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