IPS511G/IPS512G

2

www.irf.com

(1) Limited by junction temperature (pulsed current limited also by internal wiring)

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Rth1

Thermal resistance with standard footprint

—



a

Rth2

Thermal resistance with 1" square footprint

—

&

a

Rth1

Thermal resistance with standard footprint

(2 mos on)

(2 mosfets on)

—

85

—

Rth2 (1)

Thermal resistance with standard footprint

(1 mos on)

(1 mosfet on)

—

100

—

Rth2

Thermal resistance with 1" square footprint

(2 mos on)

(2 mosfets on)

—

#

—

Thermal Characteristics

8 Lead SOIC

16 Lead SOIC

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters

are referenced to GROUND lead. (Tj = 25

Symbol Parameter

Min.

Max.

Units

Test Conditions

Vout

Maximum output voltage

Vcc-50 Vcc+0.3

Voffset

Maximum logic ground to load ground offset Vcc-50 Vcc+0.3

Vin

Maximum Input voltage

-0.3

5.5

Iin, max

Maximum IN current

-5

10

mA

Vdg

Maximum diagnostic output voltage

-0.3

5.5

V

Idg, max

Maximum diagnostic output current

-1

10

mA

(IPS511G)

—

1.4

(per leg/both legs ON - IPS512G)

—

0.8

—10

ESD1

—

4000

C=100pF, R=1500

Ω,

ESD2

—

500

C=200pF, R=0

Ω, L=10µH

Pd

Maximum power dissipation

—

1

—

1.5

Tj max.

Max. storage & operating junction temp.

-40

+150

Vvv max

Maximum Vcc voltage

—

50

V

V

A

V

W