IRFF310 datasheet(1/7 Pages) IRF

部件名	IRFF310

功能描述	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

PDF	7 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

1 / 7 page

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

1.25

ID @ VGS = 10V, TC = 100°C

Continuous Drain Current

0.80

IDM

Pulsed Drain Current ➀

5.5

PD @ TC = 25°C

Max. Power Dissipation

1 5

W

Linear Derating Factor

0.12

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

0.82

mJ

IAR

Avalanche Current ➀

—A

EAR

Repetitive Avalanche Energy ➀

—mJ

dv/dt

Peak Diode Recovery dv/dt ➂

4.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

0.98(typical)

g

PD - 90425C

The HEXFET



technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

o C

A

01/22/01

www.irf.com

1

TO-39

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRFF310

400V

3.6

Ω

1.25A

Features:

n Repetitive Avalanche Ratings

n Dynamic dv/dt Rating

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

For footnotes refer to the last page

IRFF310

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6786

HEXFET



TRANSISTORS

JANTXV2N6786

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/556

400V, N-CHANNEL

类似零件编号 - IRFF310

制造商	部件名	数据表	功能描述
Intersil Corporation	IRFF310	326Kb / 7P	1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET March 1999
Seme LAB	IRFF310	16Kb / 1P	N-Channel MOSFET in a Hermetically sealed TO39
New Jersey Semi-Conduct...	IRFF310	1,003Kb / 3P	1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

More results

类似说明 - IRFF310

制造商	部件名	数据表	功能描述
International Rectifier	IRFF9220	130Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)
	IRFF120	131Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
	IRFF210	130Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)
	IRFAG40	146Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-204AA/AE)
	IRFAG50	156Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
	IRFAE30	146Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
	IRFAC40	152Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-204AA/AE)
	JANTX2N6798	134Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)
	IRF460PBF	143Kb / 7P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?숿RANSISTORS THRU-HOLE (TO-204AA/AE)
New Jersey Semi-Conduct...	IRF240	101Kb / 2P	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE