IRFF310

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

8.3

RthJA

Junction-to-Ambient

—

—

175

Typical socket mount.

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

1.25

ISM

Pulse Source Current (Body Diode) ➀

—

—

5.5

VSD

Diode Forward Voltage

—

—

1.4

V

trr

Reverse Recovery Time

—

—

540

nS

Tj = 25°C, IF =1.25A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

4.5

µC

VDD ≤ 50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

4 00

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.37

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

3.6

VGS = 10V, ID = 0.80A ➃

Resistance

—

—

4.15

VGS =10V, ID =1.25A ➃

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

0.7

—

—

S ( )

VDS > 15V, IDS = 0.80A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

2 5

VDS= 320V, VGS=0V

—

—

250

µA

VDS = 320V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

1 0 0

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

nA

VGS = -20V

Qg

Total Gate Charge

6.7

—

8.4

VGS =10V, ID =1.25A

Qgs

Gate-to-Source Charge

0.2

—

1.5

nC

VDS= 200V

Qgd

Gate-to-Drain (‘Miller’) Charge

3.5

—

5.0

Turn-On Delay Time

—

—

1 5

VDD = 200V, ID = 1.25A,

t r

Rise Time

—

—

2 0

RG = 7.5Ω

Turn-Off Delay Time

—

—

3 5

tf

Fall Time

—

—

3 0

LS + LD

Total Inductance

—

7.0

—

Ciss

Input Capacitance

—

170

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

4 9

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

1 0

—

nH

ns

Ω

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)