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MCP16331 数据表(PDF) 3 Page - Microchip Technology |
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MCP16331 数据表(HTML) 3 Page - Microchip Technology |
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3 / 40 page ![]() 2014 Microchip Technology Inc. DS20005308B-page 3 MCP16331 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VIN, SW ............................................................... -0.5V to 54V BOOST – GND ................................................... -0.5V to 60V BOOST – SW Voltage........................................ -0.5V to 6.0V VFB Voltage ........................................................ -0.5V to 6.0V EN Voltage ............................................. -0.5V to (VIN + 0.3V) Output Short Circuit Current ................................. Continuous Power Dissipation ....................................... Internally Limited Storage Temperature ................................... -65oC to +150oC Ambient Temperature with Power Applied ... -40oC to +125oC Operating Junction Temperature.................. -40oC to +160oC ESD Protection on All Pins: HBM..................................................................... 4 kV MM ......................................................................300V † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors Boldface specifications apply over the TA range of -40°C to +125°C. Parameters Sym. Min. Typ. Max. Units Conditions Input Voltage VIN 4.4 — 50 V Note 1 Feedback Voltage VFB 0.784 0.800 0.816 V Output Voltage Adjust Range VOUT 2.0 — 24 V Note 1, Note 3 Feedback Voltage Line Regulation VFB/VFB)/VIN| — 0.002 0.1 %/V VIN = 5V to 50V Feedback Voltage Load Regulation VFB/VFB| — 0.13 0.35 % IOUT= 50 mA to 500 mA Feedback Input Bias Current IFB — +/- 3 — nA Undervoltage Lockout Start UVLOSTRT — 4.1 4.4 V VIN Rising Undervoltage Lockout Stop UVLOSTOP 3 3.6 — V VIN Falling Undervoltage Lockout Hysteresis UVLOHYS — 0.5 — V Switching Frequency fSW 425 500 550 kHz Maximum Duty Cycle DCMAX 90 93 — % VIN = 5V; VFB = 0.7V; IOUT = 100 mA Minimum Duty Cycle DCMIN — 1 — % Note 4 NMOS Switch On Resistance RDS(ON) — 0.6 — VBOOST - VSW = 5V, Note 3 NMOS Switch Current Limit IN(MAX) — 1.3 — A VBOOST - VSW = 5V, Note 3 Quiescent Current IQ — 1 1.7 mA VIN = 12V; Note 2 Quiescent Current - Shutdown IQ — 6 10 A VOUT = EN = 0V Output Current IOUT 500 — — mA Note 1; see Figure 2-9 EN Input Logic High VIH 1.9 — — V Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. 2: VBOOST supply is derived from VOUT. 3: Determined by characterization, not production tested. 4: This is ensured by design. |
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