CS5212

http://onsemi.com

2

C16

0.1

µF

GATE(H)

BST

LGND

COMP

SGND

PGND

GATE(L)

IS+

IS–

CS5212

U1

GN2

GND

R8

10

C2

0.1

µF

TP4

COMP

TP5

BST

1

2

3

4

5

6

7

14

13

12

11

10

9

8

C11

0.1

µF

R1

51 k

C1

0.47

µF

R9

10

C19

1.0

µF

Q2

Q1

TP3

GATE(L)

TP2

GATE(H)

TP1

SWNODE

3.3 V

D5

BAT54S

+

+

+

C6

C7

C8 100

µF/10 V × 3

R5

4.7 k

R13

10

C15

470 pF

L1

2.9

µH

6.5 mR

ETQP6F2R9LB

GND

C3

0.1

µF

R6

4.7 k

R2

10

TP6

SENSE+

TP7

SENSE–

R4

1.0 k 1%

C5

680 pF

R3

1.5 k 1%

R7

TBD*

D6

BAT54S

D2

BAT54S

C4

0.1

µF

C22

0.1

µF

*Refer to Rpullup Value Selection section for value needed.

+

C9

+

C10

100

µF/10 V

× 2

+

C20

+

C21

Figure 1. Application Diagram, 3.3 V to 1.5 V/8.0 A Converter with Differential Remote Sense

MAXIMUM RATINGS*

Rating

Value

Unit

150

°C

Lead Temperature Soldering:

Reflow: (SMD styles only) (Note 1)

230 peak

°C

–65 to +150

°C

Package Thermal Resistance:

30

125

°C/W

°C/W

ESD Susceptibility:

Human Body Model

Machine Model

2.0

200

kV

V

JEDEC Moisture Sensitivity

1

–

1. 60 second maximum above 183

°C.

*The maximum package power dissipation must be observed.