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MCP1407-E/P 数据表(PDF) 4 Page - Microchip Technology

部件名 MCP1407-E/P
功能描述  6A High-Speed Power MOSFET Drivers
PDF  30 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MCP1407-E/P 数据表(HTML) 4 Page - Microchip Technology

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MCP1406/07
DS20002019C-page 4
 2006-2016 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ..................................(VDD +0.3V) to (GND -5V)
Input Current (VIN > VDD) ..............................................50 mA
Package Power Dissipation (TA <= +70°C)
DFN-S .......................................................................2.5W
PDIP..........................................................................1.2W
SOIC .......................................................................0.83W
TO-220 ......................................................................3.9W
ESD Protection on all Pins ................2 kV (HBM), 400V (MM)
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated
in
the
operational
sections
of
this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5VVDD18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
1.8
V
Logic ‘0’, Low Input Voltage
VIL
—1.3
0.8
V
Input Current
IIN
–10
10
µA
0V
VINVDD
Input Voltage
VIN
-5
VDD +0.3
V
Output
High Output Voltage
VOH
VDD – 0.025
V
DC Test
Low Output Voltage
VOL
0.025
V
DC Test
Output Resistance, High
ROH
—2.1
2.8
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—1.5
2.5
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—6
A
VDD  18V (Note 1)
Continuous Output Current
IDC
1.3
A
Note 1, Note 2
Latch-Up Protection Withstand
Reverse Current
IREV
1.5
A
Duty cycle
2%, t 300 µs
Switching Time (Note 3)
Rise Time
tR
—20
30
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Fall Time
tF
—20
30
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Delay Time
tD1
—40
55
ns
Figure 4-1, Figure 4-2
Delay Time
tD2
—40
55
ns
Figure 4-1, Figure 4-2
Power Supply
Supply Voltage
VDD
4.5
18.0
V
Power Supply Current
IS
130
250
µA
VIN = 3V
IS
35
100
µA
VIN = 0V
Note 1: Tested during characterization, not production tested.
2: Valid for AT (TO-220) and MF (DFN-S) packages only. TA = +25°C
3: Switching times ensured by design.



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