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Device 数据表(PDF) 3 Page - ON Semiconductor |
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Device 数据表(HTML) 3 Page - ON Semiconductor |
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3 / 17 page ![]() NCP694 http://onsemi.com 3 MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin 6.5 V Enable Voltage VCE −0.3 to Vin V Output Voltage Vout −0.3 to Vin + 0.3 V Power Dissipation SOT−89−5 PD 900 mW Power Dissipation HSON−6 PD 900 mW Operating Junction Temperature TJ +150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per JEDEC Machine Model Method 200 V THERMAL CHARACTERISTICS Rating Symbol Test Conditions Typical Value Unit Junction−to−Ambient SOT−89−5 RqJA 1 oz Copper Thickness, 100 mm2 111 °C/W Power Dissipation SOT−89−5 PD 900 mW Junction−to−Ambient HSON−6 RqJA 1 oz Copper Thickness, 100 mm2 111 °C/W Power Dissipation HSON−6 PD 900 mW NOTE: Single component mounted on an 80 x 80 x 1.5 mm FR4 PCB with stated copper head spreading area. Using the following boundary conditions as stated in EIA/JESD 51−1, 2, 3, 7, 12. |
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