BAS16HT1 datasheet(1/4 Pages) ONSEMI

部件名	BAS16HT1

功能描述	Switching Diode

PDF	4 Pages

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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1 / 4 page

February, 2004 − Rev. 3

1

Publication Order Number:

BAS16HT1/D

BAS16HT1

Preferred Device

Switching Diode

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

VR

75

Vdc

Peak Forward Current

IF

200

mAdc

Peak Forward Surge Current

IFM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board (Note 1)

TA = 25°C

Derate above 25

°C

PD

200

1.57

mW

mW/

°C

Thermal Resistance Junction to Ambient

RθJA

635

°C/W

Junction and Storage Temperature

TJ, Tstg

−55 to

150

°C

1. FR-4 Minimum Pad.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 75 Vdc)

(VR = 75 Vdc, TJ = 150°C)

(VR = 25 Vdc, TJ = 150°C)

IR

−

1.0

50

30

µAdc

Reverse Breakdown Voltage

(IBR = 100 µAdc)

V(BR)

75

−

Vdc

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

−

715

855

1000

1250

mV

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

−

2.0

pF

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)

VFR

−

1.75

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 50 Ω)

trr

−

6.0

ns

Stored Charge

(IF = 10 mAdc to VR = 5.0 Vdc,

RL = 500 Ω)

QS

−

45

pC

http://onsemi.com

SOD−323

CASE 477

STYLE 1

MARKING DIAGRAM

Preferred devices are recommended choices for future use

and best overall value.

1

CATHODE

2

ANODE

A6

= Specific Device Code

M

= Date Code

Device

Package

Shipping†

ORDERING INFORMATION

BAS16HT1

SOD−323

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1

2

A6 M

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