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2N5930 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5930 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistors 2N5930 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 7.5A 4.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 30A; IB= 7.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 4V 1.5 V ICEO Collector Cutoff Current VCE= 120V; IB= 0 2.0 mA ICBO Collector Cutoff Current VCB= 130V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10A ; VCE= 4V 20 100 hFE-2 DC Current Gain IC= 30A ; VCE= 4V 4 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V ;ftest= 1MHz 30 MHz |
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