2N5930 datasheet(1/2 Pages) ISC

部件名	2N5930

功能描述	isc Silicon NPN Power Transistors

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistors

2N5930

DESCRIPTION

·

DC Current Gain-

: hFE= 20-100@IC= 10A

·

Low Collector Saturation Voltage-

: VCE(sat)= 1.0V(Max)@ IC= 15A

APPLICATIONS

·

Designed for general purpose power amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.875

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

130

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

30

A

IB

Base Current-Continuous

7.5

A

PC

Collector Power Dissipation @TC=25℃

175

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

类似零件编号 - 2N5930

制造商	部件名	数据表	功能描述
Seme LAB	2N5930	12Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
New Jersey Semi-Conduct...	2N5930	130Kb / 2P	Silicon NPN Power Transistors

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