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M68AF031A 数据表(PDF) 14 Page - STMicroelectronics

部件名 M68AF031A
功能描述  256 Kbit (32K x 8) 5.0V Asynchronous SRAM
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M68AF031A 数据表(HTML) 14 Page - STMicroelectronics

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Table 8. Write Mode AC Characteristics
Note: 1. At any given temperature and voltage condition, tWLQZ is less than tWHQX for any given device.
2. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
Figure 15. Low VCC Data Retention AC Waveforms
Symbol
Parameter
M68AF031A
Unit
55
70
Min.
Max.
Min.
Max.
tAVAV
Write Cycle Time
55
70
ns
tAVEH
Address Valid to Chip Enable High
45
60
ns
tAVEL
Address valid to Chip Enable Low
0
0
ns
tAVWH
Address Valid to Write Enable High
45
60
ns
tAVWL
Address Valid to Write Enable Low
0
0
ns
tDVEH
Input Valid to Chip Enable High
25
30
ns
tDVWH
Input Valid to Write Enable High
25
30
ns
tEHAX
Chip Enable High to Address Transition
0
0
ns
tEHDX
Chip enable High to Input Transition
0
0
ns
tELEH
Chip Enable Low to Chip Enable High
45
60
ns
tELWH
Chip Enable Low to Write Enable High
45
60
ns
tWHAX
Write Enable High to Address Transition
0
0
ns
tWHDX
Write Enable High to Input Transition
0
0
ns
tWHQX
(1)
Write Enable High to Output Transition
5
5
ns
tWLEH
Write Enable Low to Chip Enable High
45
60
ns
tWLQZ
(1,2)
Write Enable Low to Output Hi-Z
20
25
ns
tWLWH
Write Enable Low to Write Enable High
45
50
ns
AI05925
DATA RETENTION MODE
tR
5.5V
tCDR
VCC
4.5V
VDR > 2.0V
E
E
≥ VDR – 0.2V



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